SI3493DDV-T1-GE3
RoHS

SI3493DDV-T1-GE3

Part NoSI3493DDV-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CHANNEL 20V 8A 6TSOP
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ECAD Module SI3493DDV-T1-GE3
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Specification
RoHSNon-Compliant
Height1.1 mm
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Power Dissipation2 W
Number of Channels1
Turn-On Delay Time25 ns
Turn-Off Delay Time95 ns
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-7.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V
In Stock: 16978
Pricing
QTY UNIT PRICE EXT PRICE
1 0.3959
10 0.388
100 0.3761
1000 0.3642
10000 0.3484
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product