SI3493DDV-T1-GE3
Part NoSI3493DDV-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CHANNEL 20V 8A 6TSOP
Datasheet
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Specification
RoHSNon-Compliant
Height1.1 mm
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Power Dissipation2 W
Number of Channels1
Turn-On Delay Time25 ns
Turn-Off Delay Time95 ns
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-7.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
16978
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.3959 | |
10 | 0.388 | |
100 | 0.3761 | |
1000 | 0.3642 | |
10000 | 0.3484 |