SI3865DDV-T1-GE3
Part NoSI3865DDV-T1-GE3
ManufacturerVishay
DescriptionSI3865DDV-T1-GE3 Dual N/P-channel SiC MOSFET Transistor; 2.8 A; 12 V; 6-Pin TSOP
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.7 mm
Height1 mm
Length3.1 mm
Weight19.986414 mg
InterfaceOn/Off
Lead FreeLead Free
PackagingCut Tape
REACH SVHCNo SVHC
Resistance165 mΩ
Case/PackageTSOP
Current Rating2.8 A
Number of Pins6
Output Current1 A
Number of Outputs1
Power Dissipation830 mW
Max Output Current2.8 A
Max Supply Voltage12 V
Min Supply Voltage1.5 V
Number of Channels1
Radiation HardeningNo
Output ConfigurationHigh Side
Max Power Dissipation830 mW
Nominal Input Voltage12 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
In Stock:
21020
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5459 | |
| 10 | 0.535 | |
| 100 | 0.5186 | |
| 1000 | 0.5022 | |
| 10000 | 0.4804 |
Associated Product
