SI4160DY-T1-GE3
Part NoSI4160DY-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 25.4A 8-SOIC
Datasheet
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Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time12 ns
Rise Time16 ns
REACH SVHCUnknown
Rds On Max4.9 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance2.071 nF
Power Dissipation2.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Max Power Dissipation5.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.1 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)25.4 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
23877
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.378 | |
10 | 1.3504 | |
100 | 1.3091 | |
1000 | 1.2678 | |
10000 | 1.2126 |