SI4164DY-T1-GE3
Part NoSI4164DY-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 30A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time16 ns
Lead FreeLead Free
Rise Time16 ns
REACH SVHCNo SVHC
Rds On Max3.2 mΩ
Resistance3.2 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSO
Number of Pins8
Contact PlatingTin
Input Capacitance3.545 nF
Power Dissipation3 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time35 ns
Radiation HardeningNo
Turn-Off Delay Time48 ns
Element ConfigurationSingle
Max Power Dissipation6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.2 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)30 A
Drain to Source Voltage (Vdss)30 V
In Stock:
21664
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5543 | |
| 10 | 1.5232 | |
| 100 | 1.4766 | |
| 1000 | 1.43 | |
| 10000 | 1.3678 |
Associated Product
