SI4166DY-T1-GE3
Part NoSI4166DY-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 30.5A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time15 ns
Lead FreeLead Free
Rise Time19 ns
REACH SVHCUnknown
Rds On Max3.9 mΩ
Resistance3.9 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance2.73 nF
Power Dissipation3 W
Threshold Voltage1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time30 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Max Power Dissipation6.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)20.5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
22809
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.33 | |
| 10 | 1.3034 | |
| 100 | 1.2635 | |
| 1000 | 1.2236 | |
| 10000 | 1.1704 |
Associated Product
