SI4174DY-T1-GE3
Part NoSI4174DY-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 17A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time9 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max9.5 mΩ
Resistance9.5 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance985 pF
Power Dissipation2.5 W
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance10.8 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)17 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
20768
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9309 | |
| 10 | 0.9123 | |
| 100 | 0.8844 | |
| 1000 | 0.8564 | |
| 10000 | 0.8192 |
Associated Product
