SI4214DDY-T1-GE3
Part NoSI4214DDY-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 30V 8.5A 8-SOIC
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight506.605978 mg
Fall Time12 ns
Lead FreeLead Free
Rise Time45 ns
REACH SVHCUnknown
Rds On Max19.5 mΩ
Resistance19.5 mΩ
Schedule B8541290080
Case/PackageSOIC
Number of Pins8
Input Capacitance660 pF
Power Dissipation2 W
Threshold Voltage2.5 V
Number of Channels2
Number of Elements2
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationDual
Max Power Dissipation3.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
24174
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7656 | |
| 10 | 0.7503 | |
| 100 | 0.7273 | |
| 1000 | 0.7044 | |
| 10000 | 0.6737 |
Associated Product
