SI4401BDY-T1-GE3
RoHS

SI4401BDY-T1-GE3

Part NoSI4401BDY-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 40V 8.7A 8-SOIC
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ECAD Module SI4401BDY-T1-GE3
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Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
REACH SVHCUnknown
Rds On Max14 mΩ
Resistance14 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.5 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time97 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-8.7 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-40 V
Drain to Source Breakdown Voltage-40 V
In Stock: 18106
Pricing
QTY UNIT PRICE EXT PRICE
1 1.5147
10 1.4844
100 1.439
1000 1.3935
10000 1.3329
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product