SI4410BDY-T1-GE3
Part NoSI4410BDY-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 7.5A 8-SOIC
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time15 ns
Rise Time10 ns
REACH SVHCUnknown
Rds On Max13.5 mΩ
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.4 W
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation1.4 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance13.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
18170
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
