SI4431CDY-T1-E3
Part NoSI4431CDY-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 9A 8SOIC
Datasheet
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Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time11 ns
Rise Time89 ns
Rds On Max32 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSO
Number of Pins8
Input Capacitance1.006 nF
Number of Channels1
Turn-On Delay Time38 ns
Radiation HardeningNo
Turn-Off Delay Time22 ns
Element ConfigurationSingle
Max Power Dissipation4.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance32 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7 A
Drain to Source Voltage (Vdss)30 V
In Stock:
17820
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.8858 | |
10 | 0.8681 | |
100 | 0.8415 | |
1000 | 0.8149 | |
10000 | 0.7795 |