SI4442DY-T1-E3
Part NoSI4442DY-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 15A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight506.605978 mg
Fall Time11 ns
Lead FreeLead Free
Rise Time11 ns
REACH SVHCNo SVHC
Rds On Max4.5 mΩ
Resistance4.5 mΩ
Schedule B8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1.5 V
TerminationSMD/SMT
Case/PackageSOIC
Number of Pins8
Power Dissipation1.6 W
Threshold Voltage1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time17 ns
Dual Supply Voltage30 V
Radiation HardeningNo
Turn-Off Delay Time125 ns
Element ConfigurationSingle
Max Power Dissipation1.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.5 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)22 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
17964
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.6274 | |
| 10 | 2.5749 | |
| 100 | 2.496 | |
| 1000 | 2.4172 | |
| 10000 | 2.3121 |
Associated Product
