SI4467DY-T1

Part NoSI4467DY-T1

ManufacturerVISHAY

DescriptionPower Field-Effect Transistor, 12A I(D), 12V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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Specification

RoHSNon-Compliant

Weight186.993455 mg

Fall Time230 ns

Rise Time60 ns

Case/PackageSO

Number of Pins8

Power Dissipation2.5 W

Number of Channels1

Turn-On Delay Time40 ns

Turn-Off Delay Time470 ns

Element ConfigurationSingle

Max Power Dissipation2.5 W

Max Operating Temperature150 °C

Min Operating Temperature-55 °C

Drain to Source Resistance15 mΩ

Gate to Source Voltage (Vgs)8 V

Continuous Drain Current (ID)12 A

Drain to Source Voltage (Vdss)-12 V

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