SI4467DY-T1
Part NoSI4467DY-T1
ManufacturerVISHAY
DescriptionPower Field-Effect Transistor, 12A I(D), 12V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Datasheet
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ECAD Module
Specification
RoHSNon-Compliant
Weight186.993455 mg
Fall Time230 ns
Rise Time60 ns
Case/PackageSO
Number of Pins8
Power Dissipation2.5 W
Number of Channels1
Turn-On Delay Time40 ns
Turn-Off Delay Time470 ns
Element ConfigurationSingle
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance15 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)12 A
Drain to Source Voltage (Vdss)-12 V
In Stock:
14677
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