SI4812BDY-T1-E3
Part NoSI4812BDY-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 7.3A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time13 ns
Lead FreeLead Free
Rise Time13 ns
REACH SVHCUnknown
Rds On Max16 mΩ
Resistance16 mΩ
Nominal Vgs3 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.4 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Max Power Dissipation1.4 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.3 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
20271
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Associated Product
