SI4829DY-T1-E3
Part NoSI4829DY-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 2A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time10 ns
Rise Time45 ns
Rds On Max215 mΩ
Case/PackageSOIC
Input Capacitance210 pF
Turn-Off Delay Time15 ns
Max Power Dissipation3.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance215 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)2 A
Drain to Source Voltage (Vdss)20 V
In Stock:
5972
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.25 | |
| 10 | 0.245 | |
| 100 | 0.2375 | |
| 1000 | 0.23 | |
| 10000 | 0.22 |
Associated Product
