SI4830CDY-T1-GE3
Part NoSI4830CDY-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 30V 8A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.9878 mm
Height1.5494 mm
Length4.9784 mm
Weight506.605978 mg
Fall Time10 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time12 ns
REACH SVHCUnknown
Rds On Max20 mΩ
Resistance20 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance950 pF
Power Dissipation2 W
Threshold Voltage1 V
Number of Channels2
Number of Elements2
Turn-On Delay Time17 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Element ConfigurationDual
Max Power Dissipation2.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
15127
Pricing
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Associated Product
MAX4493AUK+
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