SI4886DY-T1-E3
Part NoSI4886DY-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 9.5A 8-SOIC
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight506.605978 mg
Fall Time5 ns
Rise Time5 ns
REACH SVHCUnknown
Rds On Max10 mΩ
Nominal Vgs800 mV
Case/PackageSO
Number of Pins8
Power Dissipation1.56 W
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time42 ns
Element ConfigurationSingle
Max Power Dissipation1.56 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance10 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)13 A
Drain to Source Voltage (Vdss)30 V
In Stock:
19011
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
