SI4888DY-T1-E3
Part NoSI4888DY-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 11A 8-SOIC
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id1.6V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs7 mOhm @ 16A, 10V
Power Dissipation (Max)1.6W (Ta)
PackagingCut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesSI4888DY-T1-E3CT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs24nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 11A (Ta) 1.6W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C11A (Ta)
In Stock:
22738
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