SI4892DY-T1-E3
Part NoSI4892DY-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 8.8A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.9878 mm
Height1.5494 mm
Length4.9784 mm
Fall Time11 ns
Lead FreeLead Free
Rise Time11 ns
Rds On Max12 mΩ
Resistance12 mΩ
Case/PackageSO
Number of Pins8
Power Dissipation1.6 W
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time24 ns
Element ConfigurationSingle
Max Power Dissipation1.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance12 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8.8 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
21604
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Associated Product
