SI4936CDY-T1-GE3
Part NoSI4936CDY-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 30V 5.8A 8-SOIC
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time13 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time13 ns
REACH SVHCUnknown
Rds On Max40 mΩ
Resistance40 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance325 pF
Power Dissipation1.7 W
Threshold Voltage3 V
Number of Channels2
Number of Elements2
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Max Power Dissipation2.3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance2.8 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
22324
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5795 | |
| 10 | 0.5679 | |
| 100 | 0.5505 | |
| 1000 | 0.5331 | |
| 10000 | 0.51 |
Associated Product
