SI4943BDY-T1-E3
Part NoSI4943BDY-T1-E3
ManufacturerVishay
DescriptionMOSFET 2P-CH 20V 6.3A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time10 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCUnknown
Rds On Max19 mΩ
Resistance19 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-1 V
Case/PackageSOIC
Number of Pins8
Power Dissipation1.1 W
Number of Channels2
Number of Elements2
Turn-On Delay Time11 ns
Radiation HardeningNo
Turn-Off Delay Time94 ns
Element ConfigurationDual
Max Power Dissipation1.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance19 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)6.3 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
17099
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.78 | |
| 10 | 1.7444 | |
| 100 | 1.691 | |
| 1000 | 1.6376 | |
| 10000 | 1.5664 |
Associated Product
