SI4966DY-T1-E3
Part NoSI4966DY-T1-E3
ManufacturerVishay
DescriptionMOSFET 2N-CH 20V 8SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.9878 mm
Height1.5494 mm
Length5 mm
Weight186.993455 mg
Fall Time40 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time40 ns
REACH SVHCUnknown
Rds On Max25 mΩ
Resistance25 mΩ
Nominal Vgs600 mV
Case/PackageSO
Number of Pins8
Power Dissipation2 W
Number of Channels2
Number of Elements2
Turn-On Delay Time40 ns
Turn-Off Delay Time90 ns
Element ConfigurationDual
Max Power Dissipation2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance25 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)7.1 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
In Stock:
18132
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Associated Product
