SI4972DY-T1-E3
Part NoSI4972DY-T1-E3
ManufacturerVishay
DescriptionMOSFET 2N-CH 30V 10.8A 8SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight506.605978 mg
Fall Time26 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time130 ns
Rds On Max14.5 mΩ
Resistance14 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.08 nF
Power Dissipation2 W
Number of Channels2
Number of Elements2
Turn-On Delay Time108 ns
Turn-Off Delay Time22 ns
Element ConfigurationDual
Max Power Dissipation2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance26.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.2 A
Drain to Source Voltage (Vdss)30 V
In Stock:
17790
Pricing
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Associated Product
IPA50R280CEXKSA1
INFINEON
Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
