SI5435BDC-T1-E3
RoHS

SI5435BDC-T1-E3

Part NoSI5435BDC-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 4.3A 1206-8
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ECAD Module SI5435BDC-T1-E3
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Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package1206-8 ChipFET™
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs45 mOhm @ 4.3A, 10V
Power Dissipation (Max)1.3W (Ta)
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Other NamesSI5435BDC-T1-E3TR SI5435BDCT1E3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 4.3A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
In Stock: 17792
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product