SI5511DC-T1-GE3
Part NoSI5511DC-T1-GE3
ManufacturerVishay
DescriptionMOSFET N/P-CH 30V 4A 1206-8
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package1206-8 ChipFET™
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs55 mOhm @ 4.8A, 4.5V
Power - Max3.1W, 2.6W
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Other NamesSI5511DC-T1-GE3TR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs7.1nC @ 5V
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Detailed DescriptionMosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C4A, 3.6A
Base Part NumberSI5511
In Stock:
7182
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Associated Product
