SI5853DC-T1-E3
Part NoSI5853DC-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 2.7A 1206-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time30 ns
Rise Time30 ns
REACH SVHCUnknown
Rds On Max110 mΩ
Nominal Vgs-1 V
Case/PackageSMD/SMT
Number of Pins8
Power Dissipation1.1 W
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Max Power Dissipation1.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance110 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-3.6 A
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
22384
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Associated Product
