SI6562CDQ-T1-GE3
Part NoSI6562CDQ-T1-GE3
ManufacturerVishay
DescriptionMOSFET N/P-CH 20V 6.7A 8-TSSOP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4.4 mm
Height1 mm
Length3 mm
Weight157.991892 mg
Fall Time25 ns
Lead FreeLead Free
Rise Time25 ns
REACH SVHCUnknown
Rds On Max22 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Case/PackageTSSOP
Number of Pins8
Input Capacitance850 pF
Threshold Voltage600 mV
Number of Channels2
Number of Elements2
Turn-On Delay Time30 ns
Radiation HardeningNo
Turn-Off Delay Time45 ns
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance24 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)6.1 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
In Stock:
16014
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.029 | |
| 10 | 1.0084 | |
| 100 | 0.9775 | |
| 1000 | 0.9467 | |
| 10000 | 0.9055 |
Associated Product
