SI6875DQ-T1
RoHS

SI6875DQ-T1

Part NoSI6875DQ-T1
ManufacturerVISHAY
DescriptionSmall Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
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ECAD Module SI6875DQ-T1
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Specification
RoHSNon-Compliant
Fall Time27 ns
Rise Time27 ns
Case/PackageTSSOP
Power Dissipation1.19 W
Turn-Off Delay Time170 ns
Element ConfigurationDual
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance27 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)6.4 A
Drain to Source Breakdown Voltage20 V
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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