SI7135DP-T1-GE3
Part NoSI7135DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time50 ns
Lead FreeLead Free
Rise Time100 ns
REACH SVHCNo SVHC
Rds On Max3.9 mΩ
Resistance3.9 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageSOIC
Number of Pins8
Input Capacitance8.65 nF
Power Dissipation6.25 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time110 ns
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.2 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-60 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
In Stock:
38121
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.3005 | |
| 10 | 2.2545 | |
| 100 | 2.1855 | |
| 1000 | 2.1165 | |
| 10000 | 2.0244 |
Associated Product
