SI7164DP-T1-GE3
Part NoSI7164DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 60V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time11 ns
Lead FreeLead Free
Rise Time11 ns
REACH SVHCNo SVHC
Rds On Max6.25 mΩ
Resistance6.25 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs2.5 V
Number of Pins8
Contact PlatingTin
Input Capacitance2.83 nF
Power Dissipation6.25 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time21 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)60 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)60 V
Manufacturer Package IdentifierS17-0173-Single
Drain to Source Breakdown Voltage60 V
In Stock:
15722
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.492 | |
| 10 | 2.4422 | |
| 100 | 2.3674 | |
| 1000 | 2.2926 | |
| 10000 | 2.193 |
Associated Product
