SI7190DP-T1-GE3
Part NoSI7190DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 250V 18.4A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time9 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time12 ns
REACH SVHCUnknown
Rds On Max118 mΩ
Resistance118 MΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance2.214 nF
Power Dissipation5.4 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Max Power Dissipation96 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance118 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)4.4 A
Drain to Source Voltage (Vdss)250 V
In Stock:
17550
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.364 | |
| 10 | 2.3167 | |
| 100 | 2.2458 | |
| 1000 | 2.1749 | |
| 10000 | 2.0803 |
Associated Product
