SI7230DN-T1-E3
Part NoSI7230DN-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 9A PPAK 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.3 mm
Height1.04 mm
Length3.3 mm
Fall Time10 ns
Lead FreeLead Free
Rise Time10 ns
Rds On Max12 mΩ
Resistance12 mΩ
Number of Pins8
Number of Channels1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time33 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance12 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
23878
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6728 | |
| 10 | 0.6593 | |
| 100 | 0.6392 | |
| 1000 | 0.619 | |
| 10000 | 0.5921 |
Associated Product
