SI7308DN-T1-GE3
Part NoSI7308DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 60V 6A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Lead FreeLead Free
Rise Time15 ns
REACH SVHCUnknown
Rds On Max58 mΩ
Resistance58 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance665 pF
Power Dissipation3.2 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation3.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance58 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5.4 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock:
19344
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1639 | |
| 10 | 1.1406 | |
| 100 | 1.1057 | |
| 1000 | 1.0708 | |
| 10000 | 1.0242 |
Associated Product
