SI7315DN-T1-GE3
Part NoSI7315DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 150V 8.9A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time8 ns
PackagingDigi-Reel®
Rise Time9 ns
REACH SVHCUnknown
Rds On Max315 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Number of Pins8
Contact PlatingTin
Input Capacitance880 pF
Power Dissipation3.8 W
Number of Channels1
Number of Elements1
Turn-On Delay Time8 ns
Turn-Off Delay Time23 ns
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance262 mΩ
Gate to Source Voltage (Vgs)30 V
Continuous Drain Current (ID)-8.9 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-150 V
Drain to Source Breakdown Voltage-150 V
In Stock:
16283
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3068 | |
| 10 | 1.2807 | |
| 100 | 1.2415 | |
| 1000 | 1.2023 | |
| 10000 | 1.15 |
Associated Product
