SI7434DP-T1-GE3
Part NoSI7434DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 250V 2.3A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time23 ns
Rise Time23 ns
REACH SVHCUnknown
Rds On Max155 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Power Dissipation1.9 W
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time47 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance155 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.3 A
Drain to Source Voltage (Vdss)250 V
Drain to Source Breakdown Voltage250 V
In Stock:
19579
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.4462 | |
| 10 | 2.3973 | |
| 100 | 2.3239 | |
| 1000 | 2.2505 | |
| 10000 | 2.1527 |
Associated Product
