SI7454DP-T1-E3
RoHS

SI7454DP-T1-E3

Part NoSI7454DP-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 5A PPAK SO-8
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ECAD Module SI7454DP-T1-E3
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Current5 A
Voltage100 V
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max34 mΩ
Resistance34 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs4 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.9 W
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance34 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock: 19565
Pricing
QTY UNIT PRICE EXT PRICE
1 1.9392
10 1.9004
100 1.8422
1000 1.7841
10000 1.7065
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product