SI7454DP-T1-E3
Part NoSI7454DP-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 5A PPAK SO-8
Datasheet
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Current5 A
Voltage100 V
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max34 mΩ
Resistance34 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs4 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.9 W
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance34 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock:
19565
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.9392 | |
10 | 1.9004 | |
100 | 1.8422 | |
1000 | 1.7841 | |
10000 | 1.7065 |