SI7461DP-T1-GE3
Part NoSI7461DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 60V 8.6A PPAK SO-8
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time20 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time20 ns
REACH SVHCUnknown
Rds On Max14.5 mΩ
Resistance6.25 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.9 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time205 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8.6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-60 V
Manufacturer Package IdentifierS17-0173-Single
In Stock:
40085
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.2407 | |
| 10 | 2.1959 | |
| 100 | 2.1287 | |
| 1000 | 2.0614 | |
| 10000 | 1.9718 |
Associated Product
