SI7464DP-T1-E3
Part NoSI7464DP-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 200V 1.8A PPAK SO-8
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time12 ns
Rise Time12 ns
REACH SVHCUnknown
Rds On Max240 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs4 V
Case/PackageSOIC
Number of Pins8
Power Dissipation1.8 W
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation1.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance240 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.8 A
Drain to Source Voltage (Vdss)200 V
Drain to Source Breakdown Voltage200 V
In Stock:
16118
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.8382 | |
| 10 | 1.8014 | |
| 100 | 1.7463 | |
| 1000 | 1.6911 | |
| 10000 | 1.6176 |
Associated Product
