SI7465DP-T1-GE3
Part NoSI7465DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 60V 3.2A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time9 ns
Lead FreeLead Free
Rise Time9 ns
REACH SVHCNo SVHC
Rds On Max64 mΩ
Resistance64 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.5 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time8 ns
Radiation HardeningNo
Turn-Off Delay Time65 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance64 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-5 A
Drain to Source Voltage (Vdss)-60 V
Drain to Source Breakdown Voltage-60 V
In Stock:
46379
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3589 | |
| 10 | 1.3317 | |
| 100 | 1.291 | |
| 1000 | 1.2502 | |
| 10000 | 1.1958 |
Associated Product
