SI7469DP-T1-GE3
Part NoSI7469DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 80V 28A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time100 ns
Lead FreeLead Free
Rise Time25 ns
REACH SVHCUnknown
Rds On Max25 mΩ
Resistance25 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageSOIC
Number of Pins8
Input Capacitance4.7 nF
Power Dissipation5.2 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time105 ns
Element ConfigurationSingle
Max Power Dissipation83 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance21 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-28 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-80 V
Drain to Source Breakdown Voltage-80 V
In Stock:
41368
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9696 | |
| 10 | 2.9102 | |
| 100 | 2.8211 | |
| 1000 | 2.732 | |
| 10000 | 2.6132 |
Associated Product
