SI7478DP-T1-GE3
Part NoSI7478DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 60V 15A PPAK SO-8
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time20 ns
Lead FreeLead Free
Rise Time20 ns
REACH SVHCUnknown
Rds On Max7.5 mΩ
Resistance7.5 mΩ
Schedule B8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs3 V
Case/PackageSOIC
Number of Pins8
Power Dissipation1.9 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time115 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)15 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock:
17254
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2058 | |
| 10 | 3.1417 | |
| 100 | 3.0455 | |
| 1000 | 2.9493 | |
| 10000 | 2.8211 |
Associated Product
