SI7615DN-T1-GE3
Part NoSI7615DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 35A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.3 mm
Length3.3 mm
Fall Time28 ns
Lead FreeLead Free
Rise Time38 ns
Rds On Max3.9 mΩ
Resistance3.9 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Number of Pins8
Input Capacitance6 nF
Power Dissipation3.7 W
Number of Channels1
Number of Elements1
Turn-On Delay Time35 ns
Radiation HardeningNo
Turn-Off Delay Time80 ns
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.1 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)35 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
17668
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5857 | |
| 10 | 1.554 | |
| 100 | 1.5064 | |
| 1000 | 1.4588 | |
| 10000 | 1.3954 |
Associated Product
