SI7625DN-T1-GE3
Part NoSI7625DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 35A 1212-8 PPAK
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Lead FreeLead Free
PackagingDigi-Reel®
REACH SVHCNo SVHC
Rds On Max7 mΩ
Resistance7 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance4.427 nF
Power Dissipation3.7 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Radiation HardeningNo
Element ConfigurationSingle
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)17.3 A
Drain to Source Voltage (Vdss)-30 V
In Stock:
16825
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8748 | |
| 10 | 0.8573 | |
| 100 | 0.8311 | |
| 1000 | 0.8048 | |
| 10000 | 0.7698 |
Associated Product
