SI7686DP-T1-E3
Part NoSI7686DP-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 35A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time8 ns
Lead FreeLead Free
Rise Time16 ns
Rds On Max9.5 mΩ
Resistance9.5 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.22 nF
Power Dissipation5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time23 ns
Element ConfigurationSingle
Max Power Dissipation37.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)17.9 A
Drain to Source Voltage (Vdss)30 V
In Stock:
20697
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.062 | |
| 10 | 1.0408 | |
| 100 | 1.0089 | |
| 1000 | 0.977 | |
| 10000 | 0.9346 |
Associated Product
SNJ5474J
Texas Instruments
Dual D-type Positive-Edge-Triggered Flip-Flops With Preset And Clear 14-CDIP -55 to 125
Texas Instruments
Dual D-type Positive-Edge-Triggered Flip-Flops With Preset And Clear 14-CDIP -55 to 125
