SI7703EDN-T1-GE3
Part NoSI7703EDN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 4.3A 1212-8 PPAK
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time6 ns
Rise Time6 ns
REACH SVHCNo SVHC
Rds On Max48 mΩ
Number of Pins8
Power Dissipation1.3 W
Threshold Voltage-1 V
Turn-On Delay Time4 ns
Radiation HardeningNo
Turn-Off Delay Time23 ns
Max Power Dissipation1.3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance41 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)4.3 A
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage20 V
In Stock:
11550
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.38 | |
| 10 | 0.3724 | |
| 100 | 0.361 | |
| 1000 | 0.3496 | |
| 10000 | 0.3344 |
Associated Product
