SI7806ADN-T1-E3
Part NoSI7806ADN-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 9A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time10 ns
Rds On Max11 mΩ
Number of Pins8
Contact PlatingTin
Power Dissipation1.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time33 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9 A
Drain to Source Voltage (Vdss)30 V
In Stock:
15418
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.33 | |
| 10 | 1.3034 | |
| 100 | 1.2635 | |
| 1000 | 1.2236 | |
| 10000 | 1.1704 |
Associated Product
