SI7812DN-T1-GE3
Part NoSI7812DN-T1-GE3
ManufacturerVISHAY
DescriptionQFN8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time20 ns
REACH SVHCUnknown
Rds On Max37 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance840 pF
Power Dissipation3.8 W
Threshold Voltage2.3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Max Power Dissipation3.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance37 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.2 A
Drain to Source Voltage (Vdss)75 V
Drain to Source Breakdown Voltage75 V
In Stock:
19795
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.92 | |
| 10 | 1.8816 | |
| 100 | 1.824 | |
| 1000 | 1.7664 | |
| 10000 | 1.6896 |
Associated Product
