SI7846DP-T1-E3
RoHS

SI7846DP-T1-E3

Part NoSI7846DP-T1-E3
ManufacturerVISHAY
DescriptionSOP8
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ECAD Module SI7846DP-T1-E3
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time7 ns
Lead FreeLead Free
Rise Time7 ns
REACH SVHCUnknown
Rds On Max50 mΩ
Resistance50 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs4.5 V
Case/PackageSOIC
Number of Pins8
Power Dissipation1.9 W
Threshold Voltage4.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Dual Supply Voltage150 V
Radiation HardeningNo
Turn-Off Delay Time22 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance50 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)4 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)150 V
Drain to Source Breakdown Voltage150 V
In Stock: 22341
Pricing
QTY UNIT PRICE EXT PRICE
1 2.5145
10 2.4642
100 2.3888
1000 2.3133
10000 2.2128
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product