SI7852DP-T1-GE3
Part NoSI7852DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 80V 7.6A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time31 ns
Lead FreeLead Free
Rise Time11 ns
REACH SVHCNo SVHC
Rds On Max16.5 mΩ
Number of Pins8
Contact PlatingTin
Input Capacitance2.32 nF
Power Dissipation1.9 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time17 ns
Radiation HardeningNo
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.6 A
Drain to Source Voltage (Vdss)80 V
Drain to Source Breakdown Voltage80 V
In Stock:
24808
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.8968 | |
| 10 | 2.8389 | |
| 100 | 2.752 | |
| 1000 | 2.6651 | |
| 10000 | 2.5492 |
Associated Product
