SI7858ADP-T1-E3
Part NoSI7858ADP-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 12V 20A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time70 ns
Lead FreeLead Free
Rise Time40 ns
Rds On Max2.6 mΩ
Resistance2.6 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance5.7 nF
Power Dissipation1.9 W
Number of Channels1
Number of Elements1
Turn-On Delay Time40 ns
Radiation HardeningNo
Turn-Off Delay Time140 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance2.6 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)20 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage12 V
In Stock:
20279
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.4816 | |
| 10 | 2.432 | |
| 100 | 2.3575 | |
| 1000 | 2.2831 | |
| 10000 | 2.1838 |
Associated Product
