SI7888DP-T1-E3
Part NoSI7888DP-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 9.4A PPAK SO-8
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2V @ 250µA
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePowerPAK® SO-8
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs12 mOhm @ 12.4A, 10V
Power Dissipation (Max)1.8W (Ta)
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 9.4A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C9.4A (Ta)
In Stock:
19740
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